PART |
Description |
Maker |
RJH60D2DPP-M0-15 |
600V - 12A - IGBT Application: Inverter
|
Renesas Electronics Corporation
|
STGP12NB60H 6708 |
N-CHANNEL 12A - 600V TO-220 PowerMESH IGBT N-CHANNEL 12A - 600V TO-220 PowerMESH IGBT From old datasheet system
|
SGS Thomson Microelectronics STMICROELECTRONICS[STMicroelectronics]
|
IRG4BC30U-S |
INSULATED GATE BIPOLAR TRANSISTOR UltraFast Speed IGBT(Vces=600V, Vce(on)typ. = 1.95V, @Vge=15V, Ic=12A) 绝缘栅双极晶体管IGBT的速度超快速(VCES和\u003d 600V电压的Vce(on)的典型。\u003d 1.95V,@和VGE \u003d 15V的,集成电路\u003d 12A条) 600V UltraFast 8-60 kHz Discrete IGBT in a D2-Pak package
|
International Rectifier, Corp.
|
IRG4PC30UD |
600V UltraFast 8-60 kHz Copack IGBT in a TO-247AC package INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.95V, @Vge=15V, Ic=12A)
|
IRF[International Rectifier]
|
STW12NB60 7799 |
12 A, 600 V, 0.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 CONNECTOR ACCESSORY N-CHANNEL 600V - 0.5ohm - 12A TO-247 PowerMesh⑩II MOSFET From old datasheet system N-CHANNEL 600V 0.5 OHM 12A TO-247 POWERMESH MOSFET N-CHANNEL 600V - 0.5ohm - 12A TO-247 PowerMesh?II MOSFET N-CHANNEL 600V 0.5 OHM 12A TO-247 POWERMESH MOSFET
|
意法半导 STMICROELECTRONICS[STMicroelectronics] ST Microelectronics
|
RJH60D1DPE-15 |
600V - 10A - IGBT Application: Inverter
|
Renesas Electronics Corporation
|
RJP60V0DPM-80-15 |
600V - 22A - IGBT Application: Inverter
|
Renesas Electronics Corporation
|
RJH60A83RDPD-A0 |
600V - 10A - IGBT Application: Inverter
|
Renesas Electronics Corporation
|
RJH60D7ADPK-15 |
600V - 50A - IGBT Application: Inverter
|
Renesas Electronics Corporation
|
12FR120 12FR120M A12FR120 A12FR120M 12FR100 12FR10 |
STANDARD RECOVERY DIODES Hook-Up Wire; Conductor Size AWG:18; No. Strands x Strand Size:16 x 30; Jacket Color:Green/Yellow; Approval Bodies:UL, CSA; Approval Categories:UL AWM Style 1015, CSA Type TEW, JQA-F-, Passes VW-1 Flame Test RoHS Compliant: Yes 标准恢复二极 STANDARD RECOVERY DIODES 标准恢复二极 CAPACITOR 8200UF 25V ELEC TSHA WIRE 18AWG WHITE UL 1015 600V UL STYLE 1015, CSA TYPE TEW, 600V, 105C, GREEN W. YELLOW WIRE, UL1015, 18AWG (16X30G), 600V, RED 100V 12A Std. Recovery Diode in a DO-203AA (DO-4)package 1000V 12A Std. Recovery Diode in a DO-203AA (DO-4)package 1200V 12A Std. Recovery Diode in a DO-203AA (DO-4)package 400V 12A Std. Recovery Diode in a DO-203AA (DO-4)package 600V 12A Std. Recovery Diode in a DO-203AA (DO-4)package 800V 12A Std. Recovery Diode in a DO-203AA (DO-4)package
|
International Rectifier, Corp. IRF[International Rectifier]
|
MG360V1US41 E002277 |
Triac; Thyristor Type:Snubberless; Peak Repetitive Off-State Voltage, Vdrm:600V; On State RMS Current, IT(rms):12A; Gate Trigger Current (QI), Igt:50mA; Current, It av:12A; Gate Trigger Current Max, Igt:50mA RoHS Compliant: Yes N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS) From old datasheet system
|
Toshiba Corporation Toshiba Semiconductor
|
HGTP12N60B3D HGT1S12N60B3DS HGTG12N60B3D HGT1S12N6 |
27A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode 27A/ 600V/ UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 12A I(C) | TO-263AB
|
Fairchild Semiconductor
|